DTA115EUA |
RFQ for DTA115EUA Required Field |
 |
| Technical/Catalog Information | DTA115EUAT106 |
| Vendor | Rohm Semiconductor(VA) |
| Category | Discrete Semiconductor Products |
| Transistor Type | PNP - Pre-Biased |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Current - Collector (Ic) (Max) | 100mA |
| Power - Max | 200mW |
| Resistor - Base (R1) (Ohms) | 100K |
| Resistor - Emitter Base (R2) (Ohms) | 100K |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250A, 5mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 82 @ 5mA, 5V |
| Frequency - Transition | 250MHz |
| Mounting Type | Surface Mount |
| Package / Case | SC-70-3, SOT-323-3 |
| Packaging | Digi-Reel? |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | DTA115EUAT106 DTA115EUAT106 DTA115EUAT106DKR ND DTA115EUAT106DKRND DTA115EUAT106DKR |
| Product | Manufacturers | Pack | D/C |
| DTA115EUA | - | SOT323 | - |
Features |
| · Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit).·The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input, and parasitic effects are almost compleately eliminated.·Only the on/off conditions need to be set for operation, making device design easy.·Higher mounting densities can be achieved. |
|
Parameter |
Symbol |
Limits |
Unit | |
| Supply voltage |
VCC |
−50 |
v | |
| Input voltage |
VI |
−40 to +10 |
V | |
| Output current |
IO |
−20 |
mA | |
|
IC(Max.) |
−100 | |||
| Power dissipation | DTA115EM / DTA115EE |
Pd |
150 |
mW |
| DTA115EUA / DTA115EKA |
200 | |||
| DTA115ESA |
300 | |||
| Junction temperature |
Tj |
150 |
°C | |
| Storage temperature |
Tstg |
?55 to +150 |
°C | |
